Research Associate ‒ Characterization of Power Devices (all genders)

Research Associate ‒ Characterization of Power Devices (all genders)

The Fraunhofer Institute for Silicon Technology ISIT, located in Itzehoe, offers a cutting-edge research and manufacturing environment of approximately 200 employees and several local partners, featuring a state-of-the-art equipment portfolio, two cleanrooms, and approximately 700 m² of laboratory space. As a bridge between research and pre-development on the one hand and commercial application on the other, Fraunhofer ISIT is an exciting employer with innovative prospects for the future. Our »Power Electronics« business area focuses on the development of gallium nitride-based processes and devices. This includes lateral AlGaN/GaN HEMTs, vertical GaN MOSFETs and diodes, as well as GaN-based MEMS, sensors and microelectronic devices, and the development and adaptation of processes for the reliable production of these.

The Fraunhofer Institute for Silicon Technology ISIT, located in Itzehoe, offers a cutting-edge research and manufacturing environment of approximately 200 employees and several local partners, featuring a state-of-the-art equipment portfolio, two cleanrooms, and approximately 700 m² of laboratory space. As a bridge between research and pre-development on the one hand and commercial application on the other, Fraunhofer ISIT is an exciting employer with innovative prospects for the future.

Our »Power Electronics« business area focuses on the development of gallium nitride-based processes and devices. This includes lateral AlGaN/GaN HEMTs, vertical GaN MOSFETs and diodes, as well as GaN-based MEMS, sensors and microelectronic devices, and the development and adaptation of processes for the reliable production of these.

Be part of change

Static and dynamic electrical characterization of power devices (Si and III-V semiconductors) at wafer level and in packages (from test structures to high-performance devices with, e.g., several 100A / 1200V) Development and establishment of new measuring techniques for the characterization of GaN and SIC devices Development, design and application of test structures and measurement specifications for the in-line characterization of novel devices during production Application of compact models to evaluate and model component properties Supervision of students during electrical and materials science characterization Independent processing of work packages within forward-looking research projects with various internal and external actors from industry and research Documentation and communication of the results internally as well as to customers and capitalization of the results through publications and patents

• Static and dynamic electrical characterization of power devices (Si and III-V semiconductors) at wafer level and in packages (from test structures to high-performance devices with, e.g., several 100A / 1200V)
• Development and establishment of new measuring techniques for the characterization of GaN and SIC devices
• Development, design and application of test structures and measurement specifications for the in-line characterization of novel devices during production
• Application of compact models to evaluate and model component properties
• Supervision of students during electrical and materials science characterization
• Independent processing of work packages within forward-looking research projects with various internal and external actors from industry and research
• Documentation and communication of the results internally as well as to customers and capitalization of the results through publications and patents

What you contribute

Completed scientific university degree (master’s degree / diploma) in physics, electrical engineering, materials science, or a comparable discipline Knowledge of semiconductor manufacturing technologies and processes Experience in the characterization of semiconductor processes and devices Knowledge of modeling electrical circuits as well as device modeling using SPICE Advantages: experience of semiconductor processes and devices, device development and process and device simulation (TCAD) Proficiency in written and spoken English and German A high degree of independence, initiative and commitment The ability to quickly familiarize yourself with new challenges and to thrive while taking on responsibility in a team environment

• Completed scientific university degree (master’s degree / diploma) in physics, electrical engineering, materials science, or a comparable discipline
• Knowledge of semiconductor manufacturing technologies and processes
• Experience in the characterization of semiconductor processes and devices
• Knowledge of modeling electrical circuits as well as device modeling using SPICE
• Advantages: experience of semiconductor processes and devices, device development and process and device simulation (TCAD)
• Proficiency in written and spoken English and German
• A high degree of independence, initiative and commitment
• The ability to quickly familiarize yourself with new challenges and to thrive while taking on responsibility in a team environment

What we offer

Flexible work schedules and support for balancing work and personal life Workplace health management and a company pension plan (VBL) Corporate Benefits Subsidy for the Deutschland-Ticket Jobticket Free employee parking Internal and external training opportunities Opportunities for independent work and actively shaping the future with your own ideas Direct communication and flat hierarchies for a smooth workflow

• Flexible work schedules and support for balancing work and personal life
• Workplace health management and a company pension plan (VBL)
• Corporate Benefits
• Subsidy for the Deutschland-Ticket Jobticket
• Free employee parking
• Internal and external training opportunities
• Opportunities for independent work and actively shaping the future with your own ideas
• Direct communication and flat hierarchies for a smooth workflow

The weekly working time is 39 hours. The position is initially a two-year fixed-term position. However, we are interested in a long-term collaboration. We value and promote the diversity of our employees' skills and therefore welcome all applications – regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons are given preference in the event of equal suitability. Our tasks are diverse and adaptable – for applicants with disabilities, we work together to find solutions that best promote their abilities. Appointment, remuneration and social security benefits based on the public-sector collective wage agreement (TVöD).

With its focus on developing key technologies that are vital for the future and enabling the commercial utilization of this work by business and industry, Fraunhofer plays a central role in the innovation process. As a pioneer and catalyst for groundbreaking developments and scientific excellence, Fraunhofer helps shape society now and in the future.

Ready for a change? Then apply now and make a difference! Once we have received your online application, you will receive an automatic confirmation of receipt. We will then get back to you as soon as possible and let you know what happens next.

Technical questions will be answered by: Mr. Frank Dietz [email protected] Questions regarding the recruiting-process will be answered by: Ms. Vivien Wilkens [email protected]

Fraunhofer Institute for Silicon Technology ISIT

www.isit.fraunhofer.de

Requisition Number: 85791 Application Deadline: 10/31/2026